完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLai, Rui-Lingen_US
dc.contributor.authorShiu, Jiun-Kaien_US
dc.contributor.authorChang, Yao-Renen_US
dc.contributor.authorLin, Kao-Chaoen_US
dc.contributor.authorChang, Pei-Chien_US
dc.contributor.authorJuan, Chuan-Pinen_US
dc.contributor.authorTai, Han-Chungen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:15:11Z-
dc.date.available2014-12-08T15:15:11Z-
dc.date.issued2007en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/11408-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2426872en_US
dc.description.abstractScreening effect and reliability are two of the most important issues in carbon nanotube-based field-emission devices. A thin Ti capping layer has been deposited on the hydrogen-pretreated catalytic iron nanoparticles to control the density of subsequently grown carbon nanotubes. In this way, the screening effect can be remarkably reduced due to the density of carbon nanotubes down to 10(7) from 10(9) cm(-2) as compared to the control specimens. Thus, the turn-on field can be improved to be 2.1 from 3.8 V/mu m at the emission current density of 10 mu A/cm(2). Furthermore, the electrical breakdown field can be increased to more than 7 V/mu m and the lifetime of carbon nanotubes at high electric field (10 V/mu m) can be greatly prolonged from a few seconds to more than 1 h. This can be attributed to better adhesion and lower contact resistance between the carbon nanotubes and the substrate. (c) 2007 The Electrochemical Society. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleProperties of carbon nanotubes via a thin Ti capping layer on the pretreated catalysten_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2426872en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume154en_US
dc.citation.issue3en_US
dc.citation.spageJ109en_US
dc.citation.epageJ115en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000243977500089-
dc.citation.woscount3-
顯示於類別:期刊論文


文件中的檔案:

  1. 000243977500089.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。