標題: Si nanocrystal memory devices self-assembled by in situ rapid thermal annealing of ultrathin a-Si on SiO2
作者: Chen, Jian-Hao
Lei, Tan-Fu
Landheer, Dolf
Wu, Xiaohua
Liu, Jian
Chao, Tien-Sheng
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
摘要: Si-nanocrystal memories have been fabricated using the thermal agglomeration of an ultrathin (0.9-3.5 nm) amorphous Si (a-Si) film. The a-Si was deposited by electron beam evaporation followed by in situ annealing at 850 C for 5 min. Hemispherical nanocrystals were obtained with a dot density up to 3.9 x 10(11) cm(-2), and a stored charge density of 4.1 x 10(12) cm(-2) (electron + hole) was achieved. The data retention characteristics of nanocrystal-embedded devices have shown a 1 V memory window after 100 h. Well-separated Si nanocrystals with a 23-32% surface-coverage ratio have been successfully demonstrated. The process compatibility of the proposed technique was also discussed. (C) 2007 The Electrochemical Society.
URI: http://hdl.handle.net/11536/11413
http://dx.doi.org/10.1149/1.2764459
ISSN: 1099-0062
DOI: 10.1149/1.2764459
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 10
Issue: 10
起始頁: H302
結束頁: H304
Appears in Collections:Articles