完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChiu, S. H.en_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:15:11Z-
dc.date.available2014-12-08T15:15:11Z-
dc.date.issued2006-12-25en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2425040en_US
dc.identifier.urihttp://hdl.handle.net/11536/11420-
dc.description.abstractX-ray microscopy was employed to investigate void nucleation and propagation during electromigration in solder joints. The shape of the voids at various stages can be clearly observed. The voids became irregular when they propagated to deplete the contact opening. Growth velocity at the early stage was found to be 1.3 mu m/h under 6.5x10(3) A/cm(2) at 150 degrees C, and it decreased to 0.3 mu m/h at later stages. Formation of intermetallic compound (IMC) and compositional changes at the interface of solder/IMC on the chip side were attributed to the retarded growth rate at later stages. (c) 2006 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleInvestigation of void nucleation and propagation during electromigration of flip-chip solder joints using x-ray microscopyen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2425040en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume89en_US
dc.citation.issue26en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000243157600047-
dc.citation.woscount12-
顯示於類別:期刊論文


文件中的檔案:

  1. 000243157600047.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。