Sol-gel-derived double-layered nanocrystal memory

doi:10.1063/1.2416248

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Ko, Fu-Hsiang	en_US
dc.contributor.author	You, Hsin-Chiang	en_US
dc.contributor.author	Lei, Tan-Fu	en_US
dc.date.accessioned	2014-12-08T15:15:12Z	-
dc.date.available	2014-12-08T15:15:12Z	-
dc.date.issued	2006-12-18	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2416248	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11431	-
dc.description.abstract	The authors have used the sol-gel spin-coating method to fabricate a coexisting hafnium silicate and zirconium silicate double-layered nanocrystal (NC) memories. From transmission electron microscopic and x-ray photoelectron spectroscopic analyses, the authors determined that the hafnium silicate and zirconium silicate NCs formed after annealing at 900 degrees C for 1 min. When using channel hot electron injection for charging and band-to-band tunneling-induced hot hole injection for discharging, the NC memories exhibited superior V-th shifting because of the higher probability for trapping the charge carrier. (c) 2006 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Sol-gel-derived double-layered nanocrystal memory	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2416248	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	89	en_US
dc.citation.issue	25	en_US
dc.citation.epage		en_US
dc.contributor.department	材料科學與工程學系奈米科技碩博班	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Graduate Program of Nanotechnology , Department of Materials Science and Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000243415200052	-
dc.citation.woscount	9	-
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