完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Chen, J. M. | en_US |
dc.contributor.author | Lu, K. T. | en_US |
dc.contributor.author | Lee, J. M. | en_US |
dc.contributor.author | Chen, C. K. | en_US |
dc.contributor.author | Haw, S. C. | en_US |
dc.date.accessioned | 2014-12-08T15:15:13Z | - |
dc.date.available | 2014-12-08T15:15:13Z | - |
dc.date.issued | 2006-12-07 | en_US |
dc.identifier.issn | 0021-9606 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2400229 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/11446 | - |
dc.description.abstract | The state-selective positive-ion and negative-ion dissociation pathways of gaseous and condensed Si(CH3)(2)Cl-2 following Cl 2p, Cl 1s, and Si 2p core-level excitations have been characterized. The excitations to a specific antibonding state (15a(1)(*) state) of gaseous Si(CH3)(2)Cl-2 at the Cl 2p, Cl 1s, and Si 2p edges produce significant enhancement of fragment ions. This ion enhancement at specific core-excited states correlates closely with the ion kinetic energy distribution. The results deduced from ion kinetic energy distribution are consistent with results of quantum-chemical calculations on Si(CH3)(2)Cl-2 using the ADF package. The Cl- desorption yields for Si(CH3)(2)Cl-2/Si(100) at similar to 90 K are notably enhanced at the 15a(1)(*) resonance at both Cl 2p and Si 2p edges. The resonant enhancement of Cl- yield occurs through the formation of highly excited states of the adsorbed molecules. These results provide insight into the state-selective ionic fragmentation of molecules via core-level excitation. (c) 2006 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Dissociation dynamics of positive-ion and negative-ion fragments of gaseous and condensed Si(CH3)(2)Cl-2 via Si 2p, Cl 2p, and Cl 1s core-level excitations | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2400229 | en_US |
dc.identifier.journal | JOURNAL OF CHEMICAL PHYSICS | en_US |
dc.citation.volume | 125 | en_US |
dc.citation.issue | 21 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000242646200010 | - |
dc.citation.woscount | 3 | - |
顯示於類別: | 期刊論文 |