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dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorYen, Cheng-Chengen_US
dc.date.accessioned2014-12-08T15:15:15Z-
dc.date.available2014-12-08T15:15:15Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-1349-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/11457-
dc.description.abstractTwo different on-chip power-rail electrostatic discharge (EaD) protection circuits, (1) with NMOS and PMOS feedback, and (2) with cascaded PMOS feedback have been designed and fabricated in a 0.18-mu m CMOS technology to investigate their susceptibility to system-level ESD test. The main purpose for adopting the feedback loop into the power-rail ESD clamp circuits is to avoid the false triggering during a fast power-up operation. However, during the system-level ESD test, where the ICs in a microelectronics system have been powered up, the feedback loop used in the power-rail ESD clamp circuit provides the lock function to keep the main ESD device in a "latch-on" state. The latch-on ESD device, which is often designed with a larger device dimension to sustain high ESD level, conducts a huge current between the power lines to perform a latchup-like failure after the system-level ESD test. The susceptibility of power-rail ESD clamp circuits with the additional board-level noise filter to the system-level ESD test is also investigated. To meet high system-level ESD specifications, the chip-level ESD protection design should be considered with the transient noise during system-level ESD stress.en_US
dc.language.isoen_USen_US
dc.subjectElectrostatic Discharge (ESD)en_US
dc.subjectsystem-level ESD testen_US
dc.subjectpower clamp circuitsen_US
dc.subjectboard-level noise filteren_US
dc.titleLatchup-like failure of power-rail ESD clamp circuits in CMOS integrated circuits under system-level ESD testen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2007 IEEE INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY: WORKSHOP AND TUTORIAL NOTES, VOLS 1-3en_US
dc.citation.spage828en_US
dc.citation.epage831en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000254096000155-
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