標題: The Effect of IEC-Like Fast Transients on RC-Triggered ESD Power Clamps
作者: Yen, Cheng-Cheng
Ker, Ming-Dou
電機學院
College of Electrical and Computer Engineering
關鍵字: Electrical fast-transient (EFT) test;electromagnetic compatibility;electrostatic discharge (ESD);ESD protection circuit;latchup;system-level ESD stress
公開日期: 1-六月-2009
摘要: Four power-rail electrostatic-discharge (ESD) clamp circuits with different ESD-transient detection circuits have been fabricated in a 0.18-mu m CMOS process to investigate their susceptibility against electrical fast-transient (EFT) tests. Under EFT tests, where the integrated circuits in a microelectronic system have been powered up, the feedback loop used in the power-rail ESD clamp circuits may lock the ESD-clamping NMOS in a "latch-on" state. Such a latch-on ESD-clamping NMOS will conduct a huge current between the power lines to perform a latchuplike failure after EFT tests. A modified power-rail ESD clamp circuit has been proposed to solve this latchuplike failure and to provide a high-enough chip-level ESD robustness.
URI: http://dx.doi.org/10.1109/TED.2009.2017625
http://hdl.handle.net/11536/7199
ISSN: 0018-9383
DOI: 10.1109/TED.2009.2017625
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 56
Issue: 6
起始頁: 1204
結束頁: 1210
顯示於類別:期刊論文


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