標題: | The Effect of IEC-Like Fast Transients on RC-Triggered ESD Power Clamps |
作者: | Yen, Cheng-Cheng Ker, Ming-Dou 電機學院 College of Electrical and Computer Engineering |
關鍵字: | Electrical fast-transient (EFT) test;electromagnetic compatibility;electrostatic discharge (ESD);ESD protection circuit;latchup;system-level ESD stress |
公開日期: | 1-六月-2009 |
摘要: | Four power-rail electrostatic-discharge (ESD) clamp circuits with different ESD-transient detection circuits have been fabricated in a 0.18-mu m CMOS process to investigate their susceptibility against electrical fast-transient (EFT) tests. Under EFT tests, where the integrated circuits in a microelectronic system have been powered up, the feedback loop used in the power-rail ESD clamp circuits may lock the ESD-clamping NMOS in a "latch-on" state. Such a latch-on ESD-clamping NMOS will conduct a huge current between the power lines to perform a latchuplike failure after EFT tests. A modified power-rail ESD clamp circuit has been proposed to solve this latchuplike failure and to provide a high-enough chip-level ESD robustness. |
URI: | http://dx.doi.org/10.1109/TED.2009.2017625 http://hdl.handle.net/11536/7199 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2009.2017625 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 56 |
Issue: | 6 |
起始頁: | 1204 |
結束頁: | 1210 |
顯示於類別: | 期刊論文 |