Stress in liquid-phase deposited oxide films

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DC Field	Value	Language
dc.contributor.author	Yeh, CF	en_US
dc.contributor.author	Lin, SS	en_US
dc.contributor.author	Lur, WT	en_US
dc.date.accessioned	2014-12-08T15:02:29Z	-
dc.date.available	2014-12-08T15:02:29Z	-
dc.date.issued	1996-08-01	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1154	-
dc.description.abstract	To To develop a low-stress dielectric thin film, a novel liquid-phase deposition (LPD) technique utilizing silica-saturated hydrofluosilicic (H2SiF6) solution with only H2O added is proposed. Due to fluorine incorporation, the stress in as deposited LPD oxide can be as low as 83.3 MPa (tensile). Addition of H2O greatly affects the stresses in as-deposited LPD oxide: the less H2O added, the lower the stress will be. The stress variations accompanying thermal cycling have also been larger quantity of H2O added exhibited larger stress variations (hysteresis). After ex situ annealing at around 600 degrees C, the total stress decreased to near 0 MPa.	en_US
dc.language.iso	en_US	en_US
dc.title	Stress in liquid-phase deposited oxide films	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	143	en_US
dc.citation.issue	8	en_US
dc.citation.spage	2658	en_US
dc.citation.epage	2662	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
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