標題: ICP-induced defects in GaN characterized by capacitance analysis
作者: Lan, Wen-How
Huang, Kuo-Chin
Huang, Kai Feng
電子物理學系
Department of Electrophysics
關鍵字: GaN;ICP;current transport mechanism;Schottky diodes
公開日期: 1-十一月-2006
摘要: The defects induced by inductively coupled plasma reactive ion etching (ICP-RIE) on a Si-doped gallium nitride (GaN:Si) surface have been analyzed. According to the capacitance analysis, the interfacial states density after the ICP-etching process may be higher than 5.4 x 10(12) eV(-1) cm(-2), compared to around 1.5 x 10(11) eV(-1) cm(-2) of non-ICP-treated samples. After the ICP-etching process, three kinds of interfacial states density are observed and characterized at different annealing parameters. After the annealing process, the ICP-induced defects could be reduced more than one order of magnitude in both N-2 and H-2 ambient. The H-2 ambient shows a better behavior in removing ICP-induced defects at a temperature around 500 degrees C, and the interfacial states density around 2.2 x 10(11) eV(-1) cm(-2) can be achieved. At a temperature higher than 600 degrees C, the N-2 ambient provides a much more stable interfacial states behavior than the H-2 ambient. (c) 2006 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2006.10.005
http://hdl.handle.net/11536/11578
ISSN: 0038-1101
DOI: 10.1016/j.sse.2006.10.005
期刊: SOLID-STATE ELECTRONICS
Volume: 50
Issue: 11-12
起始頁: 1677
結束頁: 1681
顯示於類別:期刊論文


文件中的檔案:

  1. 000243272000002.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。