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dc.contributor.authorHuang, Annie T.en_US
dc.contributor.authorChou, Chung-Kuangen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:15:30Z-
dc.date.available2014-12-08T15:15:30Z-
dc.date.issued2006-11-01en_US
dc.identifier.issn1521-3323en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TADVP.2006.879427en_US
dc.identifier.urihttp://hdl.handle.net/11536/11600-
dc.description.abstractWe have developed an easy, low-cost, and low-temperature optoelectronic hermetic packaging technology utilizing the eutectic SnPb solder and the Cr/Ni/Cu bonding pad. Bonding characteristics of the design were investigated in three different setups: silicon-silicon, silicon-glass, and glass-glass samples. Hermeticity was achieved at 200 degrees C without flux for all samples during the final bonding process. The bonding pads did not dewet during or after the reflow process. By utilizing the eutectic SnPb solder, the self-alignment process can be achieved. Because the bonding process was conducted through visual alignment, original misalignment was estimated to be more than 100 mu m. The surface tension of melting solder during the reflow process allowed the samples to self-align and obtain a misalignment of less than 20 mu m after solidification, which was 4% of the entire solder width. The bonding strength of the three setups ranged from 3 to 10 MPa. Among the three setups, glass-glass samples appear to have the strongest bonding strength. This low-temperature and cost-effective soldering process has demonstrated its feasibility and potential utilization in optoelectronic packaging.en_US
dc.language.isoen_USen_US
dc.subjectflux-freeen_US
dc.subjecthermetic packagingen_US
dc.subjectintegrated circuit packagingen_US
dc.subjectsemiconductor device packagingen_US
dc.subjectsolderingen_US
dc.subjectthin-film circuit packagingen_US
dc.titleHermetic packaging using eutectic SnPb solder and Cr/Ni/Cu metallurgy layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TADVP.2006.879427en_US
dc.identifier.journalIEEE TRANSACTIONS ON ADVANCED PACKAGINGen_US
dc.citation.volume29en_US
dc.citation.issue4en_US
dc.citation.spage760en_US
dc.citation.epage765en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000241965300013-
dc.citation.woscount3-
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