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dc.contributor.authorLi, Chia-Hungen_US
dc.contributor.authorLiu, Han-Chien_US
dc.contributor.authorTseng, Shih-Chunen_US
dc.contributor.authorLin, Yi-Pingen_US
dc.contributor.authorChen, Shih-Puen_US
dc.contributor.authorLi, Jung-Yuen_US
dc.contributor.authorWu, Kwang-Hsiungen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2014-12-08T15:15:32Z-
dc.date.available2014-12-08T15:15:32Z-
dc.date.issued2006-11-01en_US
dc.identifier.issn0925-9635en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.diamond.2006.09.017en_US
dc.identifier.urihttp://hdl.handle.net/11536/11619-
dc.description.abstractMulti-wall carbon nanotube (CNT) films were fabricated by microwave plasma chemical vapor deposition at low temperatures (similar to 500 degrees C). The films when properly post-treated by laser irradiation exhibited a factor of 2-3 enhancement in the emission cur-rent, while the turn-on field (E-on) was reduced from 4.89-5.22 to 2.88-3.15 V/mu m. The introduction of excessive oxygen during laser irradiation, however, degrades the performance of field emission properties drastically. Raman spectroscopy measurements revealed the intimate correlation between the parameter I-D/I-G (intensity ratio between the two representative Raman peaks seen in carbon nanotubes) and the field emission performance. The scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses showed that the irradiation-induced modification of the tube morphology and crystallinity might be responsible for the observations. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectcarbon nanotubeen_US
dc.subjectfield emissionen_US
dc.subjectlaser irradiationen_US
dc.subjectpost-treatmenten_US
dc.titleEnhancement of the field emission properties of low-temperature-growth multi-wall carbon nanotubes by KrF excimer laser irradiation post-treatmenten_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.diamond.2006.09.017en_US
dc.identifier.journalDIAMOND AND RELATED MATERIALSen_US
dc.citation.volume15en_US
dc.citation.issue11-12en_US
dc.citation.spage2010en_US
dc.citation.epage2014en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000242931300052-
Appears in Collections:Conferences Paper


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