完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Li, Chia-Hung | en_US |
dc.contributor.author | Liu, Han-Chi | en_US |
dc.contributor.author | Tseng, Shih-Chun | en_US |
dc.contributor.author | Lin, Yi-Ping | en_US |
dc.contributor.author | Chen, Shih-Pu | en_US |
dc.contributor.author | Li, Jung-Yu | en_US |
dc.contributor.author | Wu, Kwang-Hsiung | en_US |
dc.contributor.author | Juang, Jenh-Yih | en_US |
dc.date.accessioned | 2014-12-08T15:15:32Z | - |
dc.date.available | 2014-12-08T15:15:32Z | - |
dc.date.issued | 2006-11-01 | en_US |
dc.identifier.issn | 0925-9635 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.diamond.2006.09.017 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/11619 | - |
dc.description.abstract | Multi-wall carbon nanotube (CNT) films were fabricated by microwave plasma chemical vapor deposition at low temperatures (similar to 500 degrees C). The films when properly post-treated by laser irradiation exhibited a factor of 2-3 enhancement in the emission cur-rent, while the turn-on field (E-on) was reduced from 4.89-5.22 to 2.88-3.15 V/mu m. The introduction of excessive oxygen during laser irradiation, however, degrades the performance of field emission properties drastically. Raman spectroscopy measurements revealed the intimate correlation between the parameter I-D/I-G (intensity ratio between the two representative Raman peaks seen in carbon nanotubes) and the field emission performance. The scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses showed that the irradiation-induced modification of the tube morphology and crystallinity might be responsible for the observations. (c) 2006 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | carbon nanotube | en_US |
dc.subject | field emission | en_US |
dc.subject | laser irradiation | en_US |
dc.subject | post-treatment | en_US |
dc.title | Enhancement of the field emission properties of low-temperature-growth multi-wall carbon nanotubes by KrF excimer laser irradiation post-treatment | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/j.diamond.2006.09.017 | en_US |
dc.identifier.journal | DIAMOND AND RELATED MATERIALS | en_US |
dc.citation.volume | 15 | en_US |
dc.citation.issue | 11-12 | en_US |
dc.citation.spage | 2010 | en_US |
dc.citation.epage | 2014 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000242931300052 | - |
顯示於類別: | 會議論文 |