標題: | Broadband GaInP/GaAs HBT regenerative frequency divider with active loads |
作者: | Wei, Hung-Ju Meng, Chinchun Chang, YuWen Huang, Guo-Wei 電信工程研究所 Institute of Communications Engineering |
關鍵字: | regenerative frequency divider;RFD;GaInP/GaAs HBT;active load;resistive load;double-balanced mixer |
公開日期: | 2007 |
摘要: | An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) regenerative frequency divider (RFD) with active loads is demonstrated at 4 GHz-26 GHz. In this work, the RFDs with resistive loads and active loads are fabricated in the same chip for comparison. From the measured results, the active-loading type obviously has wider operating frequency and lower input sensitivity. The f(max)/f(min) ratio of 6.5 is higher than that of general RFDs. The core power consumption is 36.7mW at the supply voltage of 5 V. The chip size is 1.0 x 1.0 mm(2). |
URI: | http://hdl.handle.net/11536/11656 |
ISBN: | 978-1-4244-0687-6 |
ISSN: | 0149-645X |
期刊: | 2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6 |
起始頁: | 2172 |
結束頁: | 2175 |
顯示於類別: | 會議論文 |