標題: Broadband GaInP/GaAs HBT regenerative frequency divider with active loads
作者: Wei, Hung-Ju
Meng, Chinchun
Chang, YuWen
Huang, Guo-Wei
電信工程研究所
Institute of Communications Engineering
關鍵字: regenerative frequency divider;RFD;GaInP/GaAs HBT;active load;resistive load;double-balanced mixer
公開日期: 2007
摘要: An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) regenerative frequency divider (RFD) with active loads is demonstrated at 4 GHz-26 GHz. In this work, the RFDs with resistive loads and active loads are fabricated in the same chip for comparison. From the measured results, the active-loading type obviously has wider operating frequency and lower input sensitivity. The f(max)/f(min) ratio of 6.5 is higher than that of general RFDs. The core power consumption is 36.7mW at the supply voltage of 5 V. The chip size is 1.0 x 1.0 mm(2).
URI: http://hdl.handle.net/11536/11656
ISBN: 978-1-4244-0687-6
ISSN: 0149-645X
期刊: 2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6
起始頁: 2172
結束頁: 2175
Appears in Collections:Conferences Paper