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dc.contributor.authorShi, Shih-Chenen_US
dc.contributor.authorChen, Chia Fuen_US
dc.contributor.authorChattopadhyay, Surojiten_US
dc.contributor.authorChen, Kuei-Hsienen_US
dc.contributor.authorKe, Bo-Wenen_US
dc.contributor.authorChen, Li-Chyongen_US
dc.contributor.authorTrinkler, Laimaen_US
dc.contributor.authorBerzina, Baibaen_US
dc.date.accessioned2014-12-08T15:15:37Z-
dc.date.available2014-12-08T15:15:37Z-
dc.date.issued2006-10-16en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2364158en_US
dc.identifier.urihttp://hdl.handle.net/11536/11669-
dc.description.abstractThe optical properties of aluminum nitride nanotips (AlNNTs) synthesized via vapor transport and condensation process have been studied by cathodoluminescence, photoluminescence (PL), thermoluminescence (TL), and UV absorption measurements. Two defect related transitions around 2.1 and 3.4 eV and an excitonic feature at 6.2 eV were identified. Compared to the AlN macropowders, the AlNNTs showed a blueshift (+0.2 eV) of the similar to 3.2 eV peak. Analysis of both PL and TL excitation measurements indicated the existence of subband gap multiple energy levels in AlNNTs. A significant TL intensity even at 145 degrees C suggests possible ultraviolet detector and dosimetric applications of these AlNNTs. (c) 2006 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleLuminescence properties of wurtzite AlN nanotipsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2364158en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume89en_US
dc.citation.issue16en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000241405200106-
dc.citation.woscount24-
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