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dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorChuang, Chiao-Shunen_US
dc.contributor.authorLin, Yung-Shengen_US
dc.contributor.authorKung, Li-Jenen_US
dc.contributor.authorChen, Tung-Hsienen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.date.accessioned2014-12-08T15:15:40Z-
dc.date.available2014-12-08T15:15:40Z-
dc.date.issued2006-10-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2006.06.009en_US
dc.identifier.urihttp://hdl.handle.net/11536/11696-
dc.description.abstractHigh performance organic thin-film transistors (OTFTs) incorporated with high dielectric nanoparticles in the dielectric layers have been demonstrated. The dielectric insulator consists of cross-linked poly-4-vinylphenol (PVP) and titanium dioxide (TiO2) nanoparticles. In order to obtain highly soluble TiO2 nanoparticles in organic solutions, the surface of nanoparticles was modified with organosiloxane. Moreover, the concern of higher leakage current, while using the high dielectric nanocomposite insulators, has been overcome by further applying another poly(alpha-methylstrylene) layer. As a result. we have demonstrated low-voltage OTFTs, which can be operated within 10 V. (C) 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectorganicen_US
dc.subjectnanoparticleen_US
dc.subjectdielectricsen_US
dc.subjectthin-film transistorsen_US
dc.titleLow-voltage organic thin-film transistors with polymeric nanocomposite dielectricsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2006.06.009en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume7en_US
dc.citation.issue5en_US
dc.citation.spage435en_US
dc.citation.epage439en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000241956800025-
dc.citation.woscount48-
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