Al Schottky contact on p-GaSe

doi:10.1016/j.spmi.2006.07.004

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DC 欄位	值	語言
dc.contributor.author	Huang, Wen-Chang	en_US
dc.contributor.author	Su, Shui-Hsiang	en_US
dc.contributor.author	Hsu, Yu-Kuei	en_US
dc.contributor.author	Wang, Chih-Chia	en_US
dc.contributor.author	Chang, Chen-Shiung	en_US
dc.date.accessioned	2014-12-08T15:15:41Z	-
dc.date.available	2014-12-08T15:15:41Z	-
dc.date.issued	2006-10-01	en_US
dc.identifier.issn	0749-6036	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.spmi.2006.07.004	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11711	-
dc.description.abstract	A new Schottky diode, Al/p-GaSe, was presented in this study. It shows an effective barrier height of 0.96 eV with an ideality factor of 1.24 over five decades and a reverse leakage current density of 4.12 x 10(-7) A/cm(2) at -2 V after rapid thermal annealing at 400 degrees C for 30 s. The generation-recombination effect of the Schottky diode was decreased as the annealing temperature was increased. The formation of Al1.33Se2 was observed by X-ray diffraction analysis after the diode was annealed at 400 degrees C for 30 s. Owing to the grains' growth, the surface morphology of the 400 degrees C-annealed diode was rougher than that of the unannealed diode, which was observed both by the AFM and the SEM analysis. (c) 2006 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	GaSe	en_US
dc.subject	Schottky contact	en_US
dc.subject	barrier height	en_US
dc.title	Al Schottky contact on p-GaSe	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/j.spmi.2006.07.004	en_US
dc.identifier.journal	SUPERLATTICES AND MICROSTRUCTURES	en_US
dc.citation.volume	40	en_US
dc.citation.issue	4-6	en_US
dc.citation.spage	644	en_US
dc.citation.epage	650	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000243208200074	-
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