標題: | Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the schottky contacts on AlGaN/GaN heterostructures |
作者: | Lu, Chung-Yu Chang, Edward Yi Huang, Jui-Chien Chang, Chia-Ta Lin, Mei-Hsuan Lee, Ching-Tung 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | AlGaN/GaN heterostructures;tungsten nitride;Schottky contacts |
公開日期: | 1-五月-2008 |
摘要: | Tungsten, stoichiometric W2N, and nitrogen-rich W2N films were used as Schottky contacts on AlGaN/GaN heterostructures. The nitrogen content in the film was controlled by varying the nitrogen-to-argon gas flow ratio during the reactive sputter deposition. The diode with the nitrogen-rich film exhibited a higher Schottky barrier height and the leakage current was comparable to that of the Ni/Au Schottky contact. Analysis suggested that this was due to the increase of the tungsten nitride work function as the result of higher nitrogen incorporation. Furthermore, after 600 degrees C thermal annealing, the diode was stable and showed no change in the leakage current. |
URI: | http://dx.doi.org/10.1007/s11664-008-0384-9 http://hdl.handle.net/11536/9386 |
ISSN: | 0361-5235 |
DOI: | 10.1007/s11664-008-0384-9 |
期刊: | JOURNAL OF ELECTRONIC MATERIALS |
Volume: | 37 |
Issue: | 5 |
起始頁: | 624 |
結束頁: | 627 |
顯示於類別: | 期刊論文 |