標題: | Effects of Ar/N-2 flow ratio on sputtered-AlN film and its application to low-voltage organic thin-film transistors |
作者: | Zan, Hsiao-Wen Yen, Kuo-Hsi Liu, Pu-Kuan Ku, Kuo-Hsin Chen, Chien-Hsun Hwang, Jennchang 光電工程學系 顯示科技研究所 Department of Photonics Institute of Display |
關鍵字: | OTFT;AlN;pentacene;organic;sputtering;low temperature;dielectric |
公開日期: | 1-十月-2006 |
摘要: | In this work, we applied a low-temperature (150 degrees) alumina nitride (AIN) film as the gate dielectric in organic thin-film transistors (OTFTs). It was found that the Poole-Frenkel-type leakage can be suppressed by increasing the nitrogen gas ratio in the deposition process. The thin and low-leakage AIN dielectric was characterized and then utilized in pentacene-based OTFTs. The proposed AIN dielectric greatly lowers the OTFT operating voltage (< 5 V). A low threshold voltage (-1.5 V), a low subthreshold swing (104 mV/decade), and a high on/off current ratio (> 10(5)) were also obtained for the AIN-OTFTs. |
URI: | http://dx.doi.org/10.1143/JJAP.45.L1093 http://hdl.handle.net/11536/11747 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.45.L1093 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS |
Volume: | 45 |
Issue: | 37-41 |
起始頁: | L1093 |
結束頁: | L1096 |
顯示於類別: | 期刊論文 |