標題: Effects of Ar/N-2 flow ratio on sputtered-AlN film and its application to low-voltage organic thin-film transistors
作者: Zan, Hsiao-Wen
Yen, Kuo-Hsi
Liu, Pu-Kuan
Ku, Kuo-Hsin
Chen, Chien-Hsun
Hwang, Jennchang
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: OTFT;AlN;pentacene;organic;sputtering;low temperature;dielectric
公開日期: 1-十月-2006
摘要: In this work, we applied a low-temperature (150 degrees) alumina nitride (AIN) film as the gate dielectric in organic thin-film transistors (OTFTs). It was found that the Poole-Frenkel-type leakage can be suppressed by increasing the nitrogen gas ratio in the deposition process. The thin and low-leakage AIN dielectric was characterized and then utilized in pentacene-based OTFTs. The proposed AIN dielectric greatly lowers the OTFT operating voltage (< 5 V). A low threshold voltage (-1.5 V), a low subthreshold swing (104 mV/decade), and a high on/off current ratio (> 10(5)) were also obtained for the AIN-OTFTs.
URI: http://dx.doi.org/10.1143/JJAP.45.L1093
http://hdl.handle.net/11536/11747
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.L1093
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume: 45
Issue: 37-41
起始頁: L1093
結束頁: L1096
顯示於類別:期刊論文


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