標題: | High-resolution XANES study of Eu(Ba1-xRx)(2)Cu3O7+delta (R = Eu, Pr) |
作者: | Chen, J. M. Liu, R. S. Lee, J. M. T Lu, K. Yang, T. J. Kramer, M. J. McCallum, R. W. 電子物理學系 Department of Electrophysics |
公開日期: | 27-九月-2006 |
摘要: | We have probed the distribution of hole carriers in Eu(Ba1-xEux)(2) Cu3O7+delta (x = 0 - 0.2) and Eu(Ba1-xPrx)(2)Cu3O7+delta (x = 0 - 0.25) by O K-edge and Cu L-edge x-ray absorption spectra. Upon Eu and Pr substitution at the Ba site in Eu(Ba1-xRx)(2)Cu3O7+delta, the concentration of holes in the CuO2 planes becomes greatly diminished. The depletion rate of hole carriers within the CuO2 planes in Eu(Ba1-xPrx)(2)Cu3O7+delta is greater than that in Eu(Ba1-xEux)(2)Cu3O7+delta. The rate of T-c suppression with Pr doping in Eu(Ba1-xPrx)(2)Cu3O7+delta is accordingly greater than that in Eu(Ba1-xEux)(2)Cu3O7+delta. |
URI: | http://dx.doi.org/10.1088/1367-2630/8/9/215 http://hdl.handle.net/11536/11755 |
ISSN: | 1367-2630 |
DOI: | 10.1088/1367-2630/8/9/215 |
期刊: | NEW JOURNAL OF PHYSICS |
Volume: | 8 |
Issue: | |
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顯示於類別: | 期刊論文 |