Structure of HfO2 films epitaxially grown on GaAs(001)

doi:10.1063/1.2356895

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsu, C. -H.	en_US
dc.contributor.author	Chang, P.	en_US
dc.contributor.author	Lee, W. C.	en_US
dc.contributor.author	Yang, Z. K.	en_US
dc.contributor.author	Lee, Y. J.	en_US
dc.contributor.author	Hong, M.	en_US
dc.contributor.author	Kwo, J.	en_US
dc.contributor.author	Huang, C. M.	en_US
dc.contributor.author	Lee, H. Y.	en_US
dc.date.accessioned	2014-12-08T15:15:47Z	-
dc.date.available	2014-12-08T15:15:47Z	-
dc.date.issued	2006-09-18	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2356895	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11766	-
dc.description.abstract	High-quality HfO2 films of technologically important thickness ranging from 1.8 to 17 nm have been grown epitaxially on GaAs (001) by molecular beam epitaxy. Thorough structural and morphological investigations were carried out by x-ray scattering and high-resolution transmission electron microscopy. The films exhibit an atomically sharp interface with the substrate and are of a monoclinic phase with predominant (001)-plane epitaxy between the HfO2 films and GaAs, in spite of a large lattice mismatch of > 8.5%.	en_US
dc.language.iso	en_US	en_US
dc.title	Structure of HfO2 films epitaxially grown on GaAs(001)	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2356895	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	89	en_US
dc.citation.issue	12	en_US
dc.citation.epage		en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000240680300092	-
dc.citation.woscount	23	-
顯示於類別：	期刊論文

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