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dc.contributor.authorHsieh, Y. C.en_US
dc.contributor.authorChang, E. Y.en_US
dc.contributor.authorLuo, G. L.en_US
dc.contributor.authorChen, S. H.en_US
dc.contributor.authorBiswas, Dhrubesen_US
dc.contributor.authorWang, S. Y.en_US
dc.contributor.authorChang, C. Y.en_US
dc.date.accessioned2014-12-08T15:15:48Z-
dc.date.available2014-12-08T15:15:48Z-
dc.date.issued2006-09-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2337770en_US
dc.identifier.urihttp://hdl.handle.net/11536/11775-
dc.description.abstractSelf-assembled In0.22Ga0.78As quantum dots (QDs) grown on Si substrate with Ge/SiGe as buffer layer grown by metal organic vapor phase epitaxy were investigated. Transmission electron microscopy and atomic force microscopy images were used to observe the size and space distribution of the In0.22Ga0.78As QDs grown on the GaAs/Ge/GeSi/Si layer structure. The influence of the growth temperature on the QDs size and density distribution was investigated. For QDs grown at 450 degrees C, the density of the In0.22Ga0.78As dots was estimated to be 1x10(11) cm(-2) and the In0.22Ga0.78As QDs thickness was 5 ML (monolayer) thick. (c) 2006 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleSelf-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs/Ge/SixGe1-x/Si substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2337770en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume100en_US
dc.citation.issue6en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000240876600115-
dc.citation.woscount4-
Appears in Collections:Articles


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