標題: AlGaAs/InGaAs high electron mobility transistor grown on Si substrate with Ge/GexSi1-x metamorphic buffer layers
作者: Chang, Edward Yi
Huang, Jui-Chien
Lin, Yueh-Chin
Hsieh, Yen-Chang
Chang, Chia-Yuan
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: HEMT;GaAs on Si;SiGe buffer layer
公開日期: 1-九月-2008
摘要: Al0.12Ga0.88As/In0.18Ga0.82As high-electron-mobility transistor (HEMT) growth oil a Si substrate using the Ge/GexSi1-x buffer is demonstrated. This is the first demonstration of Al0.12Ga0.88As/In0.18Ga0.82As HEMT growth on a Ge/GexSi1-x metamorphic buffer layer. The electron mobility ill tile In0.18Ga0.82As channel of the HEMT sample was 3.550cm(2)/(Vs). After fabrication. the HEMT device demonstrated a saturation current of 150mA/mm with a transconductance 01 155mS/ inns. The wel behaved characteristics of the HEMT device oil the Si substrate are believed to be due to the very thin buffer layer achieved and the lack of tile antiphase boundary (APB) formation and Ge diffusion into the GaAs layers.
URI: http://dx.doi.org/10.1143/JJAP.47.7069
http://hdl.handle.net/11536/149546
ISSN: 0021-4922
DOI: 10.1143/JJAP.47.7069
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 47
起始頁: 7069
結束頁: 7072
顯示於類別:期刊論文