Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs/Ge/SixGe1-x/Si substrate

標題:	Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs/Ge/SixGe1-x/Si substrate
作者:	Hsieh, Y. C. Chang, E. Y. Luo, G. L. Chen, S. H. Biswas, Dhrubes Wang, S. Y. Chang, C. Y. 材料科學與工程學系 Department of Materials Science and Engineering
公開日期:	15-九月-2006
摘要:	Self-assembled In0.22Ga0.78As quantum dots (QDs) grown on Si substrate with Ge/SiGe as buffer layer grown by metal organic vapor phase epitaxy were investigated. Transmission electron microscopy and atomic force microscopy images were used to observe the size and space distribution of the In0.22Ga0.78As QDs grown on the GaAs/Ge/GeSi/Si layer structure. The influence of the growth temperature on the QDs size and density distribution was investigated. For QDs grown at 450 degrees C, the density of the In0.22Ga0.78As dots was estimated to be 1x10(11) cm(-2) and the In0.22Ga0.78As QDs thickness was 5 ML (monolayer) thick. (c) 2006 American Institute of Physics.
URI:	http://dx.doi.org/10.1063/1.2337770 http://hdl.handle.net/11536/11775
ISSN:	0021-8979
DOI:	10.1063/1.2337770
期刊:	JOURNAL OF APPLIED PHYSICS
Volume:	100
Issue:	6
結束頁:
顯示於類別：	期刊論文

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