標題: Gain flattened erbium-doped amplifier with 34 nm flat bandwidth
作者: Yeh, C. -H.
Lin, M. -C.
Chi, S.
光電工程學系
Department of Photonics
公開日期: 14-九月-2006
摘要: A gain-flattened two-stage erbium-based fibre amplifier module, structured by an erbium-doped waveguide amplifier and an erbium-doped fibre amplifier in serial, is proposed and demonstrated experimentally. In an operating range of 1528 to 1562 nm, all the gain is above 35 d13 and the noise figure is distributed from 5.5 to 6.7 dB, and +/- 1.1 dB maximum gain variation is retrieved at an input saturation power of -25 dBm. As a result, the proposed amplifier not only enhances gain value but possesses flatness in the operating region.
URI: http://dx.doi.org/10.1049/el:20062334
http://hdl.handle.net/11536/11776
ISSN: 0013-5194
DOI: 10.1049/el:20062334
期刊: ELECTRONICS LETTERS
Volume: 42
Issue: 19
起始頁: 1086
結束頁: 1088
顯示於類別:期刊論文


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