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dc.contributor.authorChen, D. C.en_US
dc.contributor.authorYao, Y. D.en_US
dc.contributor.authorChen, C. M.en_US
dc.contributor.authorHung, Jamesen_US
dc.contributor.authorChen, Y. S.en_US
dc.contributor.authorWang, W. H.en_US
dc.contributor.authorChen, W. C.en_US
dc.contributor.authorKao, M. J.en_US
dc.date.accessioned2014-12-08T15:15:52Z-
dc.date.available2014-12-08T15:15:52Z-
dc.date.issued2006-09-01en_US
dc.identifier.issn0304-8853en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jmmm.2006.02.062en_US
dc.identifier.urihttp://hdl.handle.net/11536/11837-
dc.description.abstractThe thermal stability and the spin transportation phenomenon at room temperature and 140 degrees C of a series of magnetic tunneling junctions with the structure of bottom electrode/PtMn/Pinned layer/ AlO(x)/CoFe/NiFe/top electrode have been investigated. The MR ratio decreases from 33.5% at room temperature to 29% at 140 degrees C. The MR ratio at room temperature increases roughly 0.8% after thermal treatment at temperatures above 60 degrees C. This is related to the thermal relaxation of the strains existing in the samples. (C) 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMagnetic tunnel junctionen_US
dc.subjectTunneling magnetoresistanceen_US
dc.subjectTemperature dependenceen_US
dc.subjectThermal annealingen_US
dc.titleHigh-temperature magnetoresistance study of a magnetic tunnel junctionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jmmm.2006.02.062en_US
dc.identifier.journalJOURNAL OF MAGNETISM AND MAGNETIC MATERIALSen_US
dc.citation.volume304en_US
dc.citation.issue1en_US
dc.citation.spageE297en_US
dc.citation.epageE299en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000207211700098-
dc.citation.woscount0-
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