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dc.contributor.authorPeng, CKen_US
dc.contributor.authorLan, WHen_US
dc.contributor.authorTu, SLen_US
dc.contributor.authorYang, SJen_US
dc.contributor.authorChen, SSen_US
dc.contributor.authorLin, CCen_US
dc.date.accessioned2014-12-08T15:02:31Z-
dc.date.available2014-12-08T15:02:31Z-
dc.date.issued1996-07-01en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://dx.doi.org/10.1016/0254-0584(96)80056-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/1184-
dc.description.abstractWe have studied the InAs/GaAs strained layer superlattice (SLS) structures as non-alloyed contacts applied to pseudomorphic high electron mobility transistors (PHEMTs) grown by the molecular beam epitaxy (MBE) system. Transmission line measurements with four point configurations showed that specific contact resistances between 6.6 x 10(-7) and 2.6 x 10(-6) Omega cm(2) were obtained for the as-grown devices, with a linear correlation coefficient of 0.997. D.c. measurements of the as-grown PHEMT with 1 mu m gate showed a transconductance of 240 ms mm(-1). Microwave measurements on the same device showed a cut-off frequency of 19 GHz and a maximum power gain frequency of 42 GHz. These results are comparable with those of devices with the conventional contact scheme. Meanwhile, since the non-alloying process maintains excellent surface morphology and sharp metal pad edges, AuGeNi type metals can be used in small dimension devices. In contrast, the conventionally alloyed devices showed rough surface morphology and zigzag edges, which may affect device processing and limit the usefulness of AuGeNi metal as the ohmic contact in small dimension devices.en_US
dc.language.isoen_USen_US
dc.subjectstrained layer superlatticeen_US
dc.subjectnon-alloyed contactsen_US
dc.subjectsurface morphologyen_US
dc.titleHigh performance non-alloyed pseudomorphic high electron mobility transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/0254-0584(96)80056-3en_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume45en_US
dc.citation.issue1en_US
dc.citation.spage92en_US
dc.citation.epage96en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:A1996UT95300018-
dc.citation.woscount3-
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