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dc.contributor.authorLu, Hau-Yanen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorChang, Ting- Changen_US
dc.contributor.authorChi, Sienen_US
dc.date.accessioned2014-12-08T15:15:52Z-
dc.date.available2014-12-08T15:15:52Z-
dc.date.issued2006-09-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2006.880648en_US
dc.identifier.urihttp://hdl.handle.net/11536/11850-
dc.description.abstractThis letter presents a new pixel design and driving method for active-matrix organic light-emitting diode (AMOLED) displays using low-temperature polycrystalline silicon thin-film transistors (TFTs). The proposed pixel circuit consists of five TFTs and one capacitor to eliminate the 'variation in the threshold voltage of the TFTs, and the drop in the supply voltage in a single frame operation by the source-follower-type connection and the bootstrap. The proposed pixel circuit has been verified to realize uniform output current by the simulation work using the HSPICE software. The novel pixel design has great potential for use in large-size and high-resolution AMOLED displays.en_US
dc.language.isoen_USen_US
dc.subjectactive-matrix organic light-emitting diode (AMOLED)en_US
dc.subjectcurrent-resistance (IR) dropen_US
dc.subjectpixel designen_US
dc.subjectpolycrystalline silicon thin-film transistors (poly-Si TFTs)en_US
dc.subjectuniformityen_US
dc.titleEnhancement of brightness uniformity by a new voltage-modulated pixel design for AMOLED displaysen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2006.880648en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume27en_US
dc.citation.issue9en_US
dc.citation.spage743en_US
dc.citation.epage745en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000240008800012-
dc.citation.woscount22-
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