Self-assembled InAs quantum wire lasers

doi:10.1088/0268-1242/21/9/002

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DC Field	Value	Language
dc.contributor.author	Lin, Zhi-Chang	en_US
dc.contributor.author	Lu, Chia-Ying	en_US
dc.contributor.author	Lee, Chien-Ping	en_US
dc.date.accessioned	2014-12-08T15:15:53Z	-
dc.date.available	2014-12-08T15:15:53Z	-
dc.date.issued	2006-09-01	en_US
dc.identifier.issn	0268-1242	en_US
dc.identifier.uri	http://dx.doi.org/10.1088/0268-1242/21/9/002	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11859	-
dc.description.abstract	Self-assembled InAs quantum wires in an InGaAs matrix on the InP substrate were obtained successfully by MBE growth. Quantum wire lasers emitting in the 1.7 mu m range were demonstrated. Polarization-sensitive photoluminescence (PL) and laser characterization with different temperatures were performed to study the behaviour of the quantum wire lasers. The polarization dependence on the PL spectra and the dependence on cavity orientation for the lasing characteristics clearly demonstrate the 1D behaviour of the quantum wires.	en_US
dc.language.iso	en_US	en_US
dc.title	Self-assembled InAs quantum wire lasers	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1088/0268-1242/21/9/002	en_US
dc.identifier.journal	SEMICONDUCTOR SCIENCE AND TECHNOLOGY	en_US
dc.citation.volume	21	en_US
dc.citation.issue	9	en_US
dc.citation.spage	1221	en_US
dc.citation.epage	1223	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000240123200003	-
dc.citation.woscount	7	-
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