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dc.contributor.authorPeng, P. C.en_US
dc.contributor.authorLin, C. T.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorLin, G.en_US
dc.contributor.authorTsai, W. K.en_US
dc.contributor.authorYang, H. P.en_US
dc.contributor.authorLin, K. F.en_US
dc.contributor.authorChi, J. Y.en_US
dc.contributor.authorChi, S.en_US
dc.contributor.authorWang, S. C.en_US
dc.date.accessioned2014-12-08T15:16:01Z-
dc.date.available2014-12-08T15:16:01Z-
dc.date.issued2006-08-31en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:20061316en_US
dc.identifier.urihttp://hdl.handle.net/11536/11899-
dc.description.abstractThis investigation experimentally demonstrates tunable optical group delay in a 1.3 mu m quantum dot vertical-cavity surface-emitting laser (QD VCSEL). The QD VCSEL is fabricated on a GaAs substrate. Tunable delays are achieved by varying the bias currents, and the maximum delay of 42 ps at 10 GHz has been demonstrated at room temperature.en_US
dc.language.isoen_USen_US
dc.titleTunable optical group delay in quantum dot vertical-cavity surface-emitting laser at 10 GHzen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:20061316en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume42en_US
dc.citation.issue18en_US
dc.citation.spage1036en_US
dc.citation.epage1037en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000241016400017-
dc.citation.woscount3-
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