標題: Study of electromigration in eutectic SnPb solder stripes using the edge displacement method
作者: Chou, C. K.
Hsu, Y. C.
Chen, Chih
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: electromigration (EM);flip-chip solder;packaging
公開日期: 1-八月-2006
摘要: Electromigration (EM) parameters in the eutectic SnPb solder were measured using the edge displacement method (EDM) and an atomic force microscope (AFM) in the temperature range of 60 degrees to 140 degrees C. The measured drift velocity was found to be 0.3 A/sec when the solder stripe was stressed under 4.9 x 104 A/cm(2) at 80 degrees C, and it increased as the current density or the temperature increased. The products of DZ* at 60 degrees C, 80 degrees C, 100 degrees C, 120 degrees C, and 140 degrees C were also obtained. In addition, the EM activation energy was determined to be 0.45 eV at the temperature range 60-100 degrees C and 0.55 eV at the temperature range 100-140 degrees C. These two activation energies may correspond to the Sn and Pb diffusion at the two temperature ranges. These values are very fundamental to current-carrying capability and mean-time-to-failure measurement for solder joints.
URI: http://hdl.handle.net/11536/11961
ISSN: 0361-5235
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 35
Issue: 8
起始頁: 1655
結束頁: 1659
顯示於類別:期刊論文


文件中的檔案:

  1. 000240072400009.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。