标题: | Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AIGaN/GaN heterostructures |
作者: | Desmaris, Vincent Shiu, Jin-Yu Lu, Chung-Yu Rorsman, Niklas Zirath, Herbert Chang, Edward-Yi 材料科学与工程学系 Department of Materials Science and Engineering |
公开日期: | 1-八月-2006 |
摘要: | The microstructure of Si/Ti/Al/Ni/Au was investigated using transmission electron microscopy and energy dispersive x-ray spectroscopy. The dependence of the contact resistance on the silicon layer thickness and the temperature was correlated to the microstructure of the alloyed contacts. The enhancement of the contact resistance by inserting a 30 angstrom thick Si layer under the Ti/Al/Ni/Au metallization was attributed to diffusion of the contact into the AlGaN layer. Increasing the Si thickness and or the temperature resulted in the formation of Gold (Au)-based silicides, which prevent the formation of low interfacial TiN or AlN layers. (c) 2006 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2218262 http://hdl.handle.net/11536/11981 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.2218262 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 100 |
Issue: | 3 |
结束页: | |
显示于类别: | Articles |
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