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dc.contributor.authorChu, Ta-Yaen_US
dc.contributor.authorChen, Jenn-Fangen_US
dc.contributor.authorChen, Szu-Yien_US
dc.contributor.authorChen, Chao-Jungen_US
dc.contributor.authorChen, Chin H.en_US
dc.date.accessioned2014-12-08T15:16:10Z-
dc.date.available2014-12-08T15:16:10Z-
dc.date.issued2006-07-31en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2268923en_US
dc.identifier.urihttp://hdl.handle.net/11536/11998-
dc.description.abstractThe authors report the development of highly efficient and stable C545T doped green fluorescent Alq(3) inverted bottom-emission organic light emitting device (OLED), with a device configuration of ITO/Mg/Cs(2)O:Bphen/Alq(3)/C545T:Alq(3)/NPB/WO(3)/Al, that achieved a maximum current efficiency of 23.7 cd/A and a power efficiency of 12.4 lm/W which are two times better than those of the conventional OLED. At a brightness level of 100 cd/m(2), the device required driving current density only as low as 0.5 mA/cm(2) at a driving voltage of only 5.0 V and its half-lifetime T(1/2) in excess of 104 000 h. (c) 2006 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleHighly efficient and stable inverted bottom-emission organic light emitting devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2268923en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume89en_US
dc.citation.issue5en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000239520200102-
dc.citation.woscount24-
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