Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement

標題:	Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement
作者:	Chen, Szu-Yi Chu, Ta-Ya Chen, Jenn-Fang Su, Chien-Ying Chen, Chin H. 電子物理學系顯示科技研究所 Department of Electrophysics Institute of Display
公開日期:	31-七月-2006
摘要:	Stable inverted bottom-emitting organic light-emitting diodes (IBOLEDs) have been investigated by inserting n-type Cs2O dopant between indium-tin oxide bottom cathode and Alq(3), the combination of which not only improved the morphology of organic layer but enhanced the lifetime of the IBOLED. This n-type doped IBOLED achieved efficiencies of 5.2 cd/A and 2.0 lm/W at 20 mA/cm(2). The 20% decay lifetime (t(80)) of Cs2O doped IBOLED is 270 h which is about 1.7 times more stable than that of the conventional OLED (160 h) and 2.5 times of Li doped IBOLED (104 h). (c) 2006 American Institute of Physics.
URI:	http://dx.doi.org/10.1063/1.2335374 http://hdl.handle.net/11536/11997
ISSN:	0003-6951
DOI:	10.1063/1.2335374
期刊:	APPLIED PHYSICS LETTERS
Volume:	89
Issue:	5
結束頁:
顯示於類別：	期刊論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。