標題: | Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement |
作者: | Chen, Szu-Yi Chu, Ta-Ya Chen, Jenn-Fang Su, Chien-Ying Chen, Chin H. 電子物理學系 顯示科技研究所 Department of Electrophysics Institute of Display |
公開日期: | 31-Jul-2006 |
摘要: | Stable inverted bottom-emitting organic light-emitting diodes (IBOLEDs) have been investigated by inserting n-type Cs2O dopant between indium-tin oxide bottom cathode and Alq(3), the combination of which not only improved the morphology of organic layer but enhanced the lifetime of the IBOLED. This n-type doped IBOLED achieved efficiencies of 5.2 cd/A and 2.0 lm/W at 20 mA/cm(2). The 20% decay lifetime (t(80)) of Cs2O doped IBOLED is 270 h which is about 1.7 times more stable than that of the conventional OLED (160 h) and 2.5 times of Li doped IBOLED (104 h). (c) 2006 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2335374 http://hdl.handle.net/11536/11997 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.2335374 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 89 |
Issue: | 5 |
結束頁: | |
Appears in Collections: | Articles |
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