標題: | Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer |
作者: | Tu, Chun-Hao Chang, Ting-Chang Liu, Po-Tsun Liu, Hsin-Chou Tsai, Chia-Chou Chang, Li-Ting Tseng, Tseung-Yuan Sze, Simon M. Chang, Chun-Yen 電子工程學系及電子研究所 光電工程學系 顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
公開日期: | 31-七月-2006 |
摘要: | The formation of germanium nanocrystals embedded in silicon-oxygen nitride with distributed charge storage elements is proposed in this work. A large memory window is observed due to isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after high temperature oxidized SiGeN layer. The nonvolatile memory with the Ge nanocrystals embedded in SiON stack layer exhibits 4 V threshold voltage shift under 10 V write operation. Also, the manufacture technology using the sequent high-temperature oxidation of the a-Si layer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices. (c) 2006 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2227059 http://hdl.handle.net/11536/12002 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.2227059 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 89 |
Issue: | 5 |
結束頁: | |
顯示於類別: | 期刊論文 |