標題: | Formation of germanium nanocrystals embedded in a silicon-oxygen-nitride layer |
作者: | Tu, Chun-Hao Chang, Ting-Chang Liu, Po-Tsun Weng, Chi-Feng Liu, Hsin-Chou Chang, Li-Ting Lee, Sheng-Kai Chen, Wei-Ren Sze, Simon M. Chang, Chun-Yen 電子工程學系及電子研究所 光電工程學系 顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
公開日期: | 2007 |
摘要: | The formation of germanium nanocrystals embedded in silicon-oxygen-nitride with distributed charge storage elements is proposed. A large memory window was observed due to isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after a high-temperature oxidized SiGeN layer. The Ge nanocrystals embedded in the SiON stack layer exhibited nonvolatile memory characteristics with the obvious threshold voltage shift under a bidirectional voltage sweep. Also, the manufacturing technology using the sequent high-temperature oxidation of the a-Si layer and the direct oxidation of the SiGeN layer is proposed, respectively, for the formation of a blocking oxide layer to enhance the performance of nonvolatile memory devices. The reliability characteristics, including retention time and endurance, are also advisable for the application of nonvolatile memory device. (c) 2007 The Electrochemical Society. |
URI: | http://hdl.handle.net/11536/11405 http://dx.doi.org/10.1149/1.2717494 |
ISSN: | 0013-4651 |
DOI: | 10.1149/1.2717494 |
期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
Volume: | 154 |
Issue: | 6 |
起始頁: | H435 |
結束頁: | H439 |
顯示於類別: | 期刊論文 |