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dc.contributor.authorShi, Jin-Weien_US
dc.contributor.authorLi, Yu-Taien_US
dc.contributor.authorPan, Ci-Lingen_US
dc.contributor.authorLin, M. L.en_US
dc.contributor.authorWu, Y. S.en_US
dc.contributor.authorLiu, W. S.en_US
dc.contributor.authorChyi, J. -I.en_US
dc.date.accessioned2014-12-08T15:16:10Z-
dc.date.available2014-12-08T15:16:10Z-
dc.date.issued2006-07-31en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2267088en_US
dc.identifier.urihttp://hdl.handle.net/11536/12004-
dc.description.abstractIn this letter, the authors introduce a GaAs/AlGaAs based unitraveling carrier photodiode (UTC-PD) for a wavelength of around 830 nm. There is significant bias- and output-current-dependent bandwidth enhancement phenomena observed with this device. According to their microwave and optical-to-electrical measurement results, such distinct phenomena can occur under a much lower current density (0.3 mA/mu m(2) vs 0.05 mA/mu m(2)) than previously reported for InP-InGaAs UTC-PDs. This can be attributed to the self-induced field in the absorption region, made possible due to the optimized p-type doping profile. (c) 2006 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleBandwidth enhancement phenomenon of a high-speed GaAs-AlGaAs based unitraveling carrier photodiode with an optimally designed absorption layer at an 830 nm wavelengthen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2267088en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume89en_US
dc.citation.issue5en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000239520200111-
dc.citation.woscount8-
Appears in Collections:Articles


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