標題: Structural property of m-plane ZnO epitaxial film grown on LaAlO(3) (112) substrate
作者: Wang, Wei-Lin
Ho, Yen-Teng
Chiu, Kun-An
Peng, Chun-Yen
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Apr-2010
摘要: The microstructure of m-plane (1 0 (1) over bar 0) ZnO grown on LaAlO(3) (1 1 2) (LAO (1 1 2)) substrate by pulsed laser deposition method has been investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM). XRD shows that ZnO grown on LAO(1 1 2) appears to be oriented in pure m-plane. TEM electron diffraction patterns in cross section illustrate that m-plane ZnO is in epitaxy with LAO (1 1 2), and the orientation relationships are determined to be [1 (2) over bar 1 0](ZnO)//[(1) over bar (1) over bar 1 ](LAO) and [0 0 0 1](ZnO)//[(1) over bar 1 0](LAO). Also, TEM shows that most of threading dislocations (TDs) in a-type are mainly distributed as wiggle-like lines. From the observations in plan-view TEM, the densities of TDs and basal stacking faults are approximately estimated to be 5.1 x 10(10) cm(-2) and 4.3 x 10(5) cm(-1), respectively. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2009.12.050
http://hdl.handle.net/11536/12011
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2009.12.050
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 312
Issue: 8
起始頁: 1179
結束頁: 1182
Appears in Collections:Conferences Paper