Strain enhanced DC-RF performance of 0.13 mu m nMOSFETs on flexible plastic substrate

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DC 欄位	值	語言
dc.contributor.author	Chin, A.	en_US
dc.contributor.author	Kao, H. L.	en_US
dc.contributor.author	Kao, C. H.	en_US
dc.contributor.author	Liao, C. C.	en_US
dc.contributor.author	Tseng, Y. Y.	en_US
dc.contributor.author	Chi, C. C.	en_US
dc.date.accessioned	2014-12-08T15:16:12Z	-
dc.date.available	2014-12-08T15:16:12Z	-
dc.date.issued	2006-07-06	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el:20061035	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12037	-
dc.description.abstract	A 14.3% saturation current I-d,(sat) improvement and 0.75 dB minimum noise figure (NFmin) at 10 GHz were measured by applying similar to 0.7% tensile strain for 16 finger, 0.13 mu m RF MOSFETs with thin-body (40 mu m) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90 nm strained-Si nMOSFETs and consistent with device simulations.	en_US
dc.language.iso	en_US	en_US
dc.title	Strain enhanced DC-RF performance of 0.13 mu m nMOSFETs on flexible plastic substrate	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el:20061035	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	42	en_US
dc.citation.issue	14	en_US
dc.citation.spage	827	en_US
dc.citation.epage	829	en_US
dc.contributor.department	奈米科技中心	zh_TW
dc.contributor.department	Center for Nanoscience and Technology	en_US
dc.identifier.wosnumber	WOS:000239467500030	-
dc.citation.woscount	0	-
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