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dc.contributor.authorHsu, Hsu-Chengen_US
dc.contributor.authorWu, Chun-Yien_US
dc.contributor.authorCheng, Hsin-Mingen_US
dc.contributor.authorHsieh, Wen-Fengen_US
dc.date.accessioned2014-12-08T15:16:13Z-
dc.date.available2014-12-08T15:16:13Z-
dc.date.issued2006-07-03en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2218813en_US
dc.identifier.urihttp://hdl.handle.net/11536/12041-
dc.description.abstractWe report a simple method for fabricating heterostructured ZnMgO nanowires by annealing the preformed ZnO/MgO core-shell structure. Photoluminescence from the alloy nanowires shows strong near-band-edge (NBE) emission, reflecting good material quality. A blueshift of the NBE emission at room temperature after the annealing treatment is attributed to the diffusion of Mg from the shell into the core ZnO of the nanowires to form a ternary ZnMgO alloy. Band gap engineering and stimulated emissions of ZnMgO nanowires with different Mg doping concentrations are also demonstrated. (c) 2006 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleBand gap engineering and stimulated emission of ZnMgO nanowiresen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2218813en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume89en_US
dc.citation.issue1en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000238849200052-
dc.citation.woscount59-
Appears in Collections:Articles


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