Band gap engineering and stimulated emission of ZnMgO nanowires

doi:10.1063/1.2218813

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsu, Hsu-Cheng	en_US
dc.contributor.author	Wu, Chun-Yi	en_US
dc.contributor.author	Cheng, Hsin-Ming	en_US
dc.contributor.author	Hsieh, Wen-Feng	en_US
dc.date.accessioned	2014-12-08T15:16:13Z	-
dc.date.available	2014-12-08T15:16:13Z	-
dc.date.issued	2006-07-03	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2218813	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12041	-
dc.description.abstract	We report a simple method for fabricating heterostructured ZnMgO nanowires by annealing the preformed ZnO/MgO core-shell structure. Photoluminescence from the alloy nanowires shows strong near-band-edge (NBE) emission, reflecting good material quality. A blueshift of the NBE emission at room temperature after the annealing treatment is attributed to the diffusion of Mg from the shell into the core ZnO of the nanowires to form a ternary ZnMgO alloy. Band gap engineering and stimulated emissions of ZnMgO nanowires with different Mg doping concentrations are also demonstrated. (c) 2006 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Band gap engineering and stimulated emission of ZnMgO nanowires	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2218813	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	89	en_US
dc.citation.issue	1	en_US
dc.citation.epage		en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000238849200052	-
dc.citation.woscount	59	-
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