Impacts of precursor flow rate and temperature of PECVD-SiN capping films on strained-channel NMOSFETs

標題:	Impacts of precursor flow rate and temperature of PECVD-SiN capping films on strained-channel NMOSFETs
作者:	Lu, Ching-Sen Lin, Horng-Chih Lee, Yao-Jen Huang, Tiao-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2007
URI:	http://hdl.handle.net/11536/12067
ISBN:	978-1-4244-1891-6
期刊:	2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2
起始頁:	335
結束頁:	336
顯示於類別：	會議論文