標題: | Impacts of precursor flow rate and temperature of PECVD-SiN capping films on strained-channel NMOSFETs |
作者: | Lu, Ching-Sen Lin, Horng-Chih Lee, Yao-Jen Huang, Tiao-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2007 |
URI: | http://hdl.handle.net/11536/12067 |
ISBN: | 978-1-4244-1891-6 |
期刊: | 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 |
起始頁: | 335 |
結束頁: | 336 |
Appears in Collections: | Conferences Paper |