標題: Impacts of precursor flow rate and temperature of PECVD-SiN capping films on strained-channel NMOSFETs
作者: Lu, Ching-Sen
Lin, Horng-Chih
Lee, Yao-Jen
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
URI: http://hdl.handle.net/11536/12067
ISBN: 978-1-4244-1891-6
期刊: 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2
起始頁: 335
結束頁: 336
顯示於類別:會議論文