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dc.contributor.authorChang, SJen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2014-12-08T15:02:33Z-
dc.date.available2014-12-08T15:02:33Z-
dc.date.issued1996-07-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/0038-1101(95)00410-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/1206-
dc.description.abstractTransient responses of sidegating effects in GaAs MESFETs are analysed using two-dimensional numerical simulations. Substrates with different trap conditions are considered to clarify the dominant processes in the sidegating transients. Particularly for the electron trap rich substrate (the commonly used undoped semi-insulating GaAs), transient sidegating responses under different bias conditions and the effect of sidegating on the active loads are analyzed to evaluate the effect of sidegating on circuits in operation. Copyright (C) 1996 Elsevier Science Ltd.en_US
dc.language.isoen_USen_US
dc.titleNumerical analysis of the transient behavior of the sidegating effect in GaAs MESFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/0038-1101(95)00410-6en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume39en_US
dc.citation.issue7en_US
dc.citation.spage1015en_US
dc.citation.epage1020en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996UU39400011-
dc.citation.woscount1-
Appears in Collections:Articles


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