Numerical analysis of the transient behavior of the sidegating effect in GaAs MESFETs

doi:10.1016/0038-1101(95)00410-6

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, SJ	en_US
dc.contributor.author	Lee, CP	en_US
dc.date.accessioned	2014-12-08T15:02:33Z	-
dc.date.available	2014-12-08T15:02:33Z	-
dc.date.issued	1996-07-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/0038-1101(95)00410-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1206	-
dc.description.abstract	Transient responses of sidegating effects in GaAs MESFETs are analysed using two-dimensional numerical simulations. Substrates with different trap conditions are considered to clarify the dominant processes in the sidegating transients. Particularly for the electron trap rich substrate (the commonly used undoped semi-insulating GaAs), transient sidegating responses under different bias conditions and the effect of sidegating on the active loads are analyzed to evaluate the effect of sidegating on circuits in operation. Copyright (C) 1996 Elsevier Science Ltd.	en_US
dc.language.iso	en_US	en_US
dc.title	Numerical analysis of the transient behavior of the sidegating effect in GaAs MESFETs	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/0038-1101(95)00410-6	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	39	en_US
dc.citation.issue	7	en_US
dc.citation.spage	1015	en_US
dc.citation.epage	1020	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1996UU39400011	-
dc.citation.woscount	1	-
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