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dc.contributor.authorChen, JFen_US
dc.contributor.authorChen, NCen_US
dc.contributor.authorHuang, WYen_US
dc.contributor.authorLee, WIen_US
dc.contributor.authorFeng, MSen_US
dc.date.accessioned2014-12-08T15:02:33Z-
dc.date.available2014-12-08T15:02:33Z-
dc.date.issued1996-07-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.35.L810en_US
dc.identifier.urihttp://hdl.handle.net/11536/1207-
dc.description.abstractThe transient capacitance method nas used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27 eV were observed in the TMGa sample, while a deep level at 0.60 eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectdeep levelen_US
dc.subjecttransient capacitanceen_US
dc.subjectOMVPEen_US
dc.titleAnalysis of influence of alkyl sources on deep levels in GaN by transient capacitance methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.35.L810en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume35en_US
dc.citation.issue7Aen_US
dc.citation.spageL810en_US
dc.citation.epageL812en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
Appears in Collections:Articles


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