标题: EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
作者: LEE, WI
HUANG, TC
GUO, JD
FENG, MS
材料科学与工程学系
电子物理学系
友讯交大联合研发中心
Department of Materials Science and Engineering
Department of Electrophysics
D Link NCTU Joint Res Ctr
公开日期: 18-九月-1995
摘要: Two different kinds of n-type GaN films were prepared by organometallic vapor phase epitaxy, one by using trimethylgallium (TMGa) and another by using triethylgallium (TEGa) as the alkyl source. Schottky diodes with well-behaved current-voltage and capacitance-voltage characteristics were fabricated. Deep-level transient spectroscopy studies were performed on these samples. Three distinct deep levels, labeled E1, E2, and E3, were measured in the film grown with TMGa, with an activation energy of 0.14, 0.39, and 1.63 +/- 0.3 eV, respectively. Only one level, E3, was observed in the film prepared with TEGa. (C) 1995 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.115028
http://hdl.handle.net/11536/1729
ISSN: 0003-6951
DOI: 10.1063/1.115028
期刊: APPLIED PHYSICS LETTERS
Volume: 67
Issue: 12
起始页: 1721
结束页: 1723
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