標題: EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
作者: LEE, WI
HUANG, TC
GUO, JD
FENG, MS
材料科學與工程學系
電子物理學系
電子與資訊研究中心
Department of Materials Science and Engineering
Department of Electrophysics
Microelectronics and Information Systems Research Center
公開日期: 18-九月-1995
摘要: Two different kinds of n-type GaN films were prepared by organometallic vapor phase epitaxy, one by using trimethylgallium (TMGa) and another by using triethylgallium (TEGa) as the alkyl source. Schottky diodes with well-behaved current-voltage and capacitance-voltage characteristics were fabricated. Deep-level transient spectroscopy studies were performed on these samples. Three distinct deep levels, labeled E1, E2, and E3, were measured in the film grown with TMGa, with an activation energy of 0.14, 0.39, and 1.63 +/- 0.3 eV, respectively. Only one level, E3, was observed in the film prepared with TEGa. (C) 1995 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.115028
http://hdl.handle.net/11536/149132
ISSN: 0003-6951
DOI: 10.1063/1.115028
期刊: APPLIED PHYSICS LETTERS
Volume: 67
起始頁: 1721
結束頁: 1723
顯示於類別:期刊論文